Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films  

作　　者：吴南春 夏义本 谭寿洪 王林军 刘健敏 苏青峰 

机构地区：[1]School of Materials Science and Engineering, Shanghai University, Shanghai 200072 [2]Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2006年第9期2595-2597,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60577040, the Shanghai Foundation of Applied Materials Research and Development （0404）, the Nano-technology Project of Shanghai （0452nm051, 05nm05046）, and the Shanghai Leading Academic Disciplines （T0101）.

摘　　要：By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2 A, sheet hole concentration can increase to a value greater than 1013 cm-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2 A and 6 A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2 A, sheet hole concentration can increase to a value greater than 1013 cm-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2 A and 6 A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.

关 键 词：CHEMICAL-VAPOR-DEPOSITION HOT-FILAMENT CVD PRESSURE GROWTH 

分 类 号：O7[理学—晶体学] O47