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Chemical-vapor-deposition-grown 2D transition metal dichalcogenides:A generalist model for engineering electrocatalytic hydrogen evolution被引量：1: 《Nano Research》2023年第1期101-116,共16页Yang Zhao Jiazhao Huang Jianqiang Chen Youwen Liu Tianyou Zhai; Two-dimensional(2D)transition metal dichalcogenides(TMDs)have proved to possess exceptional catalytic performance for hydrogen evolution and are considered to be an appropriate substitute for commercial Pt-based catal...; 关键词：chemical vapor deposition two-dimensional(2D)transition metal dichalcogenides ELECTROCHEMISTRY hydrogen evolution on-chip electrocatalysis

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling: 《Chinese Physics Letters》2008年第3期1131-1134,共4页丁志博王坤姚淑德; Supported by the National Natural Science Foundation of China under Grant Nos 10375004 and 10575007, and the Bilateral China-Belgium Cooperation under Grant No BIL04/05. The authors thank Dr K. Cheng for providing the GaN samples.; Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscatteri...; 关键词：CHEMICAL-VAPOR-DEPOSITION X-RAY-DIFFRACTION FILMS

P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation被引量：3: 《Chinese Physics Letters》2008年第1期219-222,共4页何斌陈光华李志中邓金祥张文军; Supported by the National Natural Science Foundation of China under Grant No 60376007, the Research Grants Council of the Hong Kong Special Administrative Region of China under Grant Nos CityU 122805 and CityU 123806, and Beijing Natural Science Foundation under Grant No 4072007.; A boron nitride （BN）/silicon p-n heterojunction is fabricated by implanting beryllium （Be） ions into the BN films deposited by rf sputtering on n-type Si （111） substrates. The FTIR observations indicate that the...; 关键词：CUBIC BORON-NITRIDE CHEMICAL-VAPOR-DEPOSITION HIGH-PRESSURE THIN-FILMS ELECTRICAL-PROPERTIES GROWTH TEMPERATURE MECHANISM JUNCTION EPITAXY

Elimination of Crystallographic Wing Tilt of Canti-Bridged Epitaxial Laterally Overgrown GaN Films by Optimizing Growth Procedure: 《Chinese Physics Letters》2007年第7期2018-2021,共4页颜建锋邢志刚王晶郭丽伟朱学亮彭铭曾于乃森贾海强陈弘周均铭; Supported by the National Key Basic Research Programme of China under Grant No 2002CB311900, and the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148.; Canti-bridged epitaxial lateral overgrowth （CBELO） of GaN is performed by metalorganic chemical vapour deposition （MOCVD） on maskless V-grooved sapphire substrates prepared by wet chemical etching with different m...; 关键词：CHEMICAL-VAPOR-DEPOSITION X-RAY-DIFFRACTION DENSITY GAN THIN-FILMS SAPPHIRE SUBSTRATE LAYERS FABRICATION SI(111)

MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films: 《Chinese Physics Letters》2007年第5期1393-1396,共4页李亮张荣谢自力张禹修向前刘斌陈琳俞慧强韩平龚海梅郑有炓; Supported by the Special Fund for Major State Basic Research Project of China under Grant Nos 2006CB604905 and 2006CB604907, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Great Fund of Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210, BK2006126）.; We study the growth of AlxGa1-x N epilayers on （0001） sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium （TMGa）, we obtain crack-free AlGaN films...; 关键词：CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES ALGAN MOVPE SAPPHIRE PHOTODETECTORS ALLOYS

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films: 《Chinese Physics Letters》2007年第5期1400-1402,共3页周觅陈韬谭晶晶茹国平蒋玉龙高冉屈新萍; Supported by the National Natural Science Foundation in China under Grant No 60476010, the Science and Technology Committee of the Shanghai Municipality （04QMX1407）, the National Basic Research Programme of China under Grant No 2006CB302703, and the International Research Training Group （Materials and Concepts for Advanced Interconnects）.; The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition （ALD） using bis（cyclopentadienyl） ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a depos...; 关键词：CHEMICAL-VAPOR-DEPOSITION RUTHENIUM FILMS NANOSTRUCTURE BARRIER

Effect of Bias on Content of GeC in Ge1-xCx Films: 《Chinese Physics Letters》2007年第3期803-806,共4页展长勇王立无黄宁康; Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films ...; 关键词：CHEMICAL-VAPOR-DEPOSITION

Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si （111） Studied by RBS/Channelling and HRXRD: 《Chinese Physics Letters》2007年第3期831-834,共4页丁志博王坤周生强陈田祥姚淑德; Supported by the National Natural Science Foundation of China under Grant Nos 10375004 and 10575007, and the Bilateral Cooperation between China and Belgium under Grant No BIL04/05.; Rutherford backscattering （RBS）/channelling and high resolution x-ray diffraction （HRXRD） have been used to characterize the tetragonal distortion of a GaN epilayer with four Alx Ga1-xN and single AIN buffer layer...; 关键词：TEMPERATURE ALN INTERLAYERS CHEMICAL-VAPOR-DEPOSITION

Characteristics of High In-Content InGaN Alloys Grown by MOCVD: 《Chinese Physics Letters》2006年第12期3369-3372,共4页朱学亮郭丽伟于乃森彭铭曾颜建锋葛炳辉贾海强陈弘周均铭; InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy re...; 关键词：CHEMICAL-VAPOR-DEPOSITION FUNDAMENTAL-BAND GAP INDIUM NITRIDE IMPROVEMENT ABSORPTION LAYERS

Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films: 《Chinese Physics Letters》2006年第9期2595-2597,共3页吴南春夏义本谭寿洪王林军刘健敏苏青峰; Supported by the National Natural Science Foundation of China under Grant No 60577040, the Shanghai Foundation of Applied Materials Research and Development （0404）, the Nano-technology Project of Shanghai （0452nm051, 05nm05046）, and the Shanghai Leading Academic Disciplines （T0101）.; By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-（100）Si wafer surface at I kPa gas pressure. The deposited films are charac...; 关键词：CHEMICAL-VAPOR-DEPOSITION HOT-FILAMENT CVD PRESSURE GROWTH

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