Characteristics of High In-Content InGaN Alloys Grown by MOCVD  

作　　者：朱学亮 郭丽伟 于乃森 彭铭曾 颜建锋 葛炳辉 贾海强 陈弘 周均铭 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy ot Sciences. Beijing 100080

出　　处：《Chinese Physics Letters》2006年第12期3369-3372,共4页中国物理快报（英文版）

摘　　要：InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.

关 键 词：CHEMICAL-VAPOR-DEPOSITION FUNDAMENTAL-BAND GAP INDIUM NITRIDE IMPROVEMENT ABSORPTION LAYERS 

分 类 号：TN304.23[电子电信—物理电子学]