A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling  

作　　者：丁志博 王坤 姚淑德 

机构地区：[1]Department of Technical Physics, School of Physics, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2008年第3期1131-1134,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10375004 and 10575007, and the Bilateral China-Belgium Cooperation under Grant No BIL04/05. The authors thank Dr K. Cheng for providing the GaN samples.

摘　　要：Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.

关 键 词：CHEMICAL-VAPOR-DEPOSITION X-RAY-DIFFRACTION FILMS 

分 类 号：O41[理学—理论物理]