云南高校图书馆联盟文献共享服务平台- LIGHT-EMITTING-DIODES

LIGHT-EMITTING-DIODES: 作品数：20被引量：19H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关期刊：《Progress in Natural Science:Materials International》《Journal of Semiconductors》《Journal of Materials Science & Technology》《Bulletin of the Chinese Academy of Sciences》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划上海市自然科学基金更多>>

Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications被引量：2: 《Opto-Electronic Advances》2024年第3期35-49,共15页Tingwei Lu Yue Lin Tianqi Zhang Yue Huang Xiaotong Fan Shouqiang Lai Yijun Lu Hao-Chung Kuo Zhong Chen Tingzhu Wu Rong Zhang; the National Natural Science Foundation of China(62274138);Natural Science Foundation of Fujian Province of China(2023J06012);Science and Technology Plan Project in Fujian Province of China(2021H0011);Fundamental Research Funds for the Central Universities(20720230029);Compound semiconductor technology Collaborative Innovation Platform project of FuXiaQuan National Independent Innovation Demonstration Zone(3502ZCQXT2022005).; In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polar...; 关键词：halide perovskite LIGHT-EMITTING-DIODES polarized emission nanocrystals stability

Laser-induced inverted patterning of nanocrystals embedded glass for micro-light-emitting diodes被引量：2: 《Journal of Materials Science & Technology》2023年第19期138-144,共7页Yuzhou Hu Ying Ye Wenchao Zhang Kai Li Yao Zhou Yudong Zhang Zhao Deng Jianjun Han Xiujian Zhao Chao Liu; supported by the Key Research and Development Program of Hubei Province (No.2021BAA206).; High resolution and full-color light-emitting diodes require precise and efficient patterning of light-emitting structures containing quantum dots or nanocrystals.We report light-induced inverted patterning of nanocry...; 关键词：NANOCRYSTALS Ultrafast laser Sub-micro patterning Micro-light-emitting-diodes

All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer被引量：1: 《Progress in Natural Science:Materials International》2016年第5期503-509,共7页Jiahui Li Yuanlong Shao Xuecheng Chen Hongzhi Wang Yaogang Li Qinghong Zhang; financial support by Natural Science Foundation of China (No. 51672043 and 61674028);The Shanghai Natural Science Foundation (15ZR1401200);the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning(1520000013);Program of Shanghai Academic Research Leader (16XD1400100);the Program of Introducing Talents of Discipline to Universities (No. 111-2-04);the Fundamental Research Funds for the Central Universities (2232014A3-06); All-inorganic quantum dot light emitting diodes(QLEDs) have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an ...; 关键词：Inorganic material NiO nanosheets QLED

Advances and prospects in nitrides based light-emitting-diodes被引量：4: 《Journal of Semiconductors》2016年第6期1-14,共14页李晋闽刘喆刘志强闫建昌魏同波伊晓燕王军喜; supported by the National High Technology Research and Development Program of China(No.2013AA03A101); Due to their low power consumption,long lifetime and high efficiency,nitrides based white lightemitting-diodes（LEDs） have long been considered to be a promising technology for next generation illumination.In this wo...; 关键词：nitrides light-emitting-diodes MOCVD multiple-quantum-well p-doping

Three-Step Growth Optimization of AlN Epilayers by MOCVD: 《Chinese Physics Letters》2008年第6期2265-2268,共4页彭铭曾郭丽伟张洁于乃森朱学亮颜建锋葛炳辉贾海强陈弘周均铭; Supported by the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, the National High- Tech Research and Development Programme of China under Grant Nos 07K1031B21 and 07K1021B21, and the National Basic Research Programme of China under Grant No 2002CB311900.; A three-step growth process is developed for depositing high-quality aluminium-nitride （AlN） epilayers on （001） sapphire by low pressure metalorganic chemical vapour deposition （LP-MOCVD）. We adopt a low tempera...; 关键词：X-RAY-DIFFRACTION LIGHT-EMITTING-DIODES GAN FILMS SAPPHIRE AIN

Performance Improvement of Bulk Heterojunction Organic Photovoltaic Cell by Addition of a Hole Transport Material: 《Chinese Physics Letters》2008年第3期1091-1093,共3页张楠刘倩毛杰刘遵峰杨利营印寿根陈永胜; Supported by the National Natural Science Foundation of China under Grant Nos 60676051, 20644004, and 07JCYBJC03000, the Tianjin Natural Science Foundation （06TXTJJC14603）, the National Basic Research Program of China under Grant No 2006CBON0702）, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20040055020, and Tianjin Key Laboratory for Photoelectric Materials and Devices.; A novel photovoltaic cell with an active layer of poly（phenyleneethynylene）（PPE）/C60/N,N＇-diphenyl-N,N＇-di-（m-tolyl）-p-benzidine （TPD） is designed. In the active layer, PPE is the major component; C60 and T...; 关键词：LIGHT-EMITTING-DIODES SOLAR-CELLS POLYMER DEVICES MOLECULES BLEND

Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor被引量：1: 《Chinese Physics Letters》2007年第10期2977-2979,共3页李盼来杨志平王志军郭庆林; Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and...; 关键词：LIGHT-EMITTING-DIODES

Electronic Structures of Wurtzite GaN with Ga and N Vacancies被引量：1: 《Chinese Physics Letters》2007年第7期2048-2051,共4页庞超史俊杰张艳 K.S.A.Butcher T.L.Tansley J.E.Downes 尚家香; The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band stru...; 关键词：GENERALIZED GRADIENT APPROXIMATION LIGHT-EMITTING-DIODES NATIVE DEFECTS GALLIUM NITRIDE AIN INN

Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact被引量：1: 《Chinese Physics Letters》2007年第6期1741-1744,共4页赵德胜张书明段俐宏王玉田江德生刘文宝张宝顺杨辉; Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on th...; 关键词：LIGHT-EMITTING-DIODES P-TYPE GAN LOW-RESISTANCE DEVICES

Enhanced Green Electrophosphorescence from Oxadiazole-Functionalized Iridium Complex-Doped Devices Using Poly（9,9-Dioctylfluorene） Instead of Poly（N-Vinylcarbazole） as a Host Matrix被引量：2: 《Chinese Physics Letters》2007年第5期1386-1389,共4页罗翠萍周计王磊邓继勇秦治军朱美香朱卫国; Supported by the National Natural Science Foundation of China under Grant Nos 20272014 and 50473046, and the Science Foundation of the Ministry of Education of China under Grant No 204097, and the 0utstanding Youth Foundation of Hunan Province under Grant No 04J J1002, and the Science Foundation of the Department of Education of Hunan Province under Grant No 03A049.; Optoelectronic properties of the oxadiazole-functionalized iridium complex-doped polymer light-emitting devices （PLEDs） are demonstrated with two different polymeric host matrices at the dopant concentrations 1-8%. ...; 关键词：LIGHT-EMITTING-DIODES HIGH-EFFICIENCY INJECTION UNIT

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

LIGHT-EMITTING-DIODES

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

LIGHT-EMITTING-DIODES

检索结果分析

下载全文

用户登录

高级检索检索式检索