Effects of Ag on Electrical Properties of Ag/Ni/p-GaN Ohmic Contact  

作　　者：赵德胜 张书明 段俐宏 王玉田 江德生 刘文宝 张宝顺 杨辉 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2007年第6期1741-1744,共4页中国物理快报（英文版）

摘　　要：Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 × 10^-4 Ωcm^2 is obtained at annealing temperature of 550^o C.Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 × 10^-4 Ωcm^2 is obtained at annealing temperature of 550^o C.

关 键 词：LIGHT-EMITTING-DIODES P-TYPE GAN LOW-RESISTANCE DEVICES 

分 类 号：O46[理学—电子物理学]