Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films  

Effect of Pretreatment of TaN Substrates on Atomic Layer Deposition Growth of Ru Thin Films

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作  者:周觅 陈韬 谭晶晶 茹国平 蒋玉龙 高冉 屈新萍 

机构地区:[1]Department of Microelectronics, Fudan University, Shanghai 200433

出  处:《Chinese Physics Letters》2007年第5期1400-1402,共3页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation in China under Grant No 60476010, the Science and Technology Committee of the Shanghai Municipality (04QMX1407), the National Basic Research Programme of China under Grant No 2006CB302703, and the International Research Training Group (Materials and Concepts for Advanced Interconnects).

摘  要:The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as ruthenium precursor and reactant respectively at a deposition temperature of 330℃. The low-energy Ar ion bombardment and Ru pre-deposition are performed to the underlying TaN substrates before ALD process in order to improve the Ru nucleation. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are carried out to characterize the properties of ALD Ru films. The results show that the nucleation density of Ru films with Ar^+ bombardment to the underlying TaN substrates is much higher than that of the ones without any pretreatment. The possible reasons are discussed.

关 键 词:CHEMICAL-VAPOR-DEPOSITION RUTHENIUM FILMS NANOSTRUCTURE BARRIER 

分 类 号:O484[理学—固体物理]

 

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