Effect of Bias on Content of GeC in Ge1-xCx Films  

作　　者：展长勇 王立无 黄宁康 

机构地区：[1]Key Laboratory of Radiation and Technology of Education Ministry, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064

出　　处：《Chinese Physics Letters》2007年第3期803-806,共4页中国物理快报（英文版）

摘　　要：Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed.Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed.

关 键 词：CHEMICAL-VAPOR-DEPOSITION 

分 类 号：O484[理学—固体物理]