Supported by the National Natural Science Foundation of China under Grant No 60376007, the Research Grants Council of the Hong Kong Special Administrative Region of China under Grant Nos CityU 122805 and CityU 123806, and Beijing Natural Science Foundation under Grant No 4072007.
A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the...
Supported by the National Basic Research Program of China under Grant No 2006CB302700, the National High Technology Development Programme of China under Grant No 2006AA03Z360~ Chinese Academy of Sciences (Y2005027), Science and Technology Council of Shanghai under Grant Nos AM0517, 05JC14076, 0552nm043, 06QA14060, 06XD14025, 0652nm003, and 06DZ22017, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation (Hong Kong).
We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS ...
Supported by the National Natural Science Foundation of China under Nos 60206005, 60376017, and 60676007, the Shanghai Applied Materials Research and Development Foundation and Silicon Storage Technology, Inc.
Electrical properties and phase structures of (Si+N)-codoped Oe2Sb2Te5 (GST) for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous...
Supported by the Chinese Academy of Sciences (Y2005027), the Science and Technology Council of Shanghai (AM0517, 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043), the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation (Hong Kong).
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm depo...
Supported by the National Key Basic Research Special Foundation of China under Grant No T(32000036601, the National High Technology Program of China under Grant Nos 2001AA313130 and 2004AA31G060, the National Natural Science Foundation of China under Crant Nos 60244001 and 60390074, and the Beijing Science and Teclnology Plan (D04040040321).
The comparative study of epitaxial 380-run-thick p-Al0.091 Ga0.909 N materials without and with special surface chemical treatment is systematically carried out. After the treatment process, the deep level luminous pe...
Sn-doped Ge2Sb2Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystall...