ELECTRICAL-PROPERTIES

作品数:6被引量:8H指数:2
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相关期刊:《Chinese Physics Letters》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金更多>>
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P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation被引量:3
《Chinese Physics Letters》2008年第1期219-222,共4页何斌 陈光华 李志中 邓金祥 张文军 
Supported by the National Natural Science Foundation of China under Grant No 60376007, the Research Grants Council of the Hong Kong Special Administrative Region of China under Grant Nos CityU 122805 and CityU 123806, and Beijing Natural Science Foundation under Grant No 4072007.
A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the...
关键词:CUBIC BORON-NITRIDE CHEMICAL-VAPOR-DEPOSITION HIGH-PRESSURE THIN-FILMS ELECTRICAL-PROPERTIES GROWTH TEMPERATURE MECHANISM JUNCTION EPITAXY 
Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application被引量:2
《Chinese Physics Letters》2007年第4期1103-1105,共3页吴良才 宋志棠 饶峰 徐成 张挺 殷伟君 封松林 
Supported by the National Basic Research Program of China under Grant No 2006CB302700, the National High Technology Development Programme of China under Grant No 2006AA03Z360~ Chinese Academy of Sciences (Y2005027), Science and Technology Council of Shanghai under Grant Nos AM0517, 05JC14076, 0552nm043, 06QA14060, 06XD14025, 0652nm003, and 06DZ22017, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation (Hong Kong).
We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS ...
关键词:RANDOM-ACCESS MEMORY THIN OXIDE-FILMS GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NEGATIVE RESISTANCE NIO FILMS 
Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance
《Chinese Physics Letters》2007年第3期781-783,共3页蔡燕飞 周鹏 林殷茵 汤庭鳌 陈良尧 李晶 乔保卫 赖云峰 冯洁 蔡炳初 陈邦民 
Supported by the National Natural Science Foundation of China under Nos 60206005, 60376017, and 60676007, the Shanghai Applied Materials Research and Development Foundation and Silicon Storage Technology, Inc.
Electrical properties and phase structures of (Si+N)-codoped Oe2Sb2Te5 (GST) for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous...
关键词:RANDOM-ACCESS MEMORY ELECTRICAL-PROPERTIES CRYSTALLIZATION IMPROVEMENT MODEL 
Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy被引量:1
《Chinese Physics Letters》2006年第9期2557-2559,共3页吴良才 刘波 宋志棠 冯高明 封松林 陈宝明 
Supported by the Chinese Academy of Sciences (Y2005027), the Science and Technology Council of Shanghai (AM0517, 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043), the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation (Hong Kong).
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm depo...
关键词:AMORPHOUS THIN-FILMS RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS ELECTRICAL-PROPERTIES NONVOLATILE GE20TE80-XBIX IMPLANTATION TEMPERATURE TRANSITION 
Improved Surface Characteristics and Contact Performance of Epitaxial p-AlGaN by a Chemical Treatment Process
《Chinese Physics Letters》2006年第2期432-435,共4页邵嘉平 韩彦军 汪莱 江洋 席光义 李洪涛 赵维 罗毅 
Supported by the National Key Basic Research Special Foundation of China under Grant No T(32000036601, the National High Technology Program of China under Grant Nos 2001AA313130 and 2004AA31G060, the National Natural Science Foundation of China under Crant Nos 60244001 and 60390074, and the Beijing Science and Teclnology Plan (D04040040321).
The comparative study of epitaxial 380-run-thick p-Al0.091 Ga0.909 N materials without and with special surface chemical treatment is systematically carried out. After the treatment process, the deep level luminous pe...
关键词:LIGHT-EMITTING-DIODES OHMIC CONTACTS ELECTRICAL-PROPERTIES EMISSION GAN NM PHOTOLUMINESCENCE OPERATION DEFECTS BAND 
Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory被引量:3
《Chinese Physics Letters》2005年第11期2929-2932,共4页徐成 刘波 宋志棠 封松林 陈邦明 
Sn-doped Ge2Sb2Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystall...
关键词:RANDOM-ACCESS MEMORY ION-BEAM METHOD ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES CELL-ELEMENT RESISTANCE IMPLANTATION TRANSITION ALLOYS MEDIA 
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