MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films  

作　　者：李亮 张荣 谢自力 张禹 修向前 刘斌 陈琳 俞慧强 韩平 龚海梅 郑有炓 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 [2]Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing 100083 [3]Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083

出　　处：《Chinese Physics Letters》2007年第5期1393-1396,共4页中国物理快报（英文版）

基　　金：Supported by the Special Fund for Major State Basic Research Project of China under Grant Nos 2006CB604905 and 2006CB604907, the National Natural Science Foundation of China under Grant Nos 6039072, 60476030, 60421003 and 60676057, the Great Fund of Ministry of Education of China （10416）, the Research Fund for the Doctoral Programme of Higher Education of China （20050284004）, and the Natural Science Foundation of Jiangsu Province （BK2005210, BK2006126）.

摘　　要：We study the growth of AlxGa1-x N epilayers on （0001） sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium （TMGa）, we obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers （x =0- 1） are investigated by x-ray diffraction, atomic force microscopy （AFM） and scanning electron microscopy （SEM）. It is found that a two-direction growth appears along the c-axis and the （1011） directions for x ≥ 0.45. From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility orAl adatoms can induce the formation of （1011） grains.We study the growth of AlxGa1-x N epilayers on （0001） sapphire by low-pressure MOCVD, using a lowtemperature AIN buffer. By varying the input flow rates of trimethylgallium （TMGa）, we obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers （x =0- 1） are investigated by x-ray diffraction, atomic force microscopy （AFM） and scanning electron microscopy （SEM）. It is found that a two-direction growth appears along the c-axis and the （1011） directions for x ≥ 0.45. From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility orAl adatoms can induce the formation of （1011） grains.

关 键 词：CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES ALGAN MOVPE SAPPHIRE PHOTODETECTORS ALLOYS 

分 类 号：O484[理学—固体物理]