GaAs混频二极管的设计和制作  

Design and Fabrication of GaAs Mixer Diodes

作　　者：韩钧[1] 林顺兵[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2006年第10期774-777,共4页Semiconductor Technology

摘　　要：GaAs混频二极管是制作混频器的关键器件,从GaAs混频二极管的工作原理出发简述了其参数设计和典型制作工艺。介绍了GaAs混频二极管的主要性能:击穿电压VBR≥4V,零偏压结电容0.1～0.15pF,串联电阻Rs≤3Ω,整机噪声系数NF≤5.3dB。并给出了在8～18GHz混频器中的使用结果。GaAs mixer diode is the main device for the mixer. The design and the type fabrication technologies of GaAs mixer diodes based on its working principle were introduced. The main performances of GaAs mixer diodes based on this design and fabrication technologies are VBR ≥ 4 V, Cjo 0.1-0.15 pF, R5≤3 Ω, NF≤5.3 dB. The application in the 8-18 GHz mixer were described.

关 键 词：砷化镓 混频二极管 噪声系数 

分 类 号：TN311.8[电子电信—物理电子学]