注入Nb^+的蓝宝石晶体退火前后的光学分析  

Optical Analysis of Nb^+ Implanted Sapphire Before and After Annealing

作　　者：王新练[1] 邹萍[2] 王春芬 阳剑[2] 黄宁康[2] 

机构地区：[1]平顶山工学院基础部,河南平顶山467001 [2]四川大学原子核科学技术研究所,四川成都610064 [3]洛阳船舶材料研究院,河南洛阳471039

出　　处：《原子能科学技术》2006年第5期584-587,共4页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(10176016)

摘　　要：将Nb+在不同条件下注入不同晶向的蓝宝石晶体,然后,在还原性气氛下退火,并对退火前后的蓝宝石晶体进行光学分析。分析结果表明,Nb+注入蓝宝石晶体产生的色心缺陷主要集中在紫外和可见光的高能区。通过对光吸收谱进行高斯拟合及荧光谱分析确认,引起吸收的点缺陷主要是F、F+、F2、F2+、F22+心等阴离子空位。退火可使这些色心点缺陷减少。退火温度越高,色心点缺陷减少越多,且减少的程度与注入温度有关。此外,700 nm处的荧光峰随激发光波长变化而呈现出不同的变化趋势。Sapphire crystals with different orientations were implanted with Nb^＋ ions m different conditions and annealed at reducing atmosphere. Optical analysis results show that the main optical absorption bands lay in the higher energy sector for all the samples. The absorption curves were evaluated by Gaussian fitting based on the well known F-type centers, which were confirmed by luminescence measurements. The results of Gaussian fitting show that there are F center, F^＋ center, F2 center, F2^＋ center and F2^2＋ center in sapphire implanted with Nb^＋ ions. After annealing at different temperature, all kinds of color centers decrease, the higher the temperature is, the more the defects decrease. The stabilization of the defects also relates with the implantation temperature. In addition, the optical density of luminescence peak at about 700 nm shows different changing with the changing of the exciting light＇s wavelength.

关 键 词：离子注入 蓝宝石晶体 光学分析 Nb^+ 退火 

分 类 号：TG174.4[金属学及工艺—金属表面处理] O433.4[金属学及工艺—金属学]