PN结型硅基TiO_2氧传感器的特性分析  

Characteristic analysis of TiO_2 oxygen sensor with silicon PN-junction substrate

作　　者：张辉军[1] 穆长生[1] 

机构地区：[1]黑龙江大学集成电路重点实验室,黑龙江哈尔滨150080

出　　处：《传感器与微系统》2006年第9期26-28,共3页Transducer and Microsystem Technologies

摘　　要：采用薄膜技术研制了一种以硅PN结结构为基底材料的TiO2氧传感器,阐述了该传感器的工作原理、结构设计、工艺流程及其特性。给出了磁控溅射工艺制备银电极及TiO2薄膜的方法,利用X射线衍射(XRD)标定了TiO2薄膜的金红石相晶体结构,通过扫描电镜(SEM)分析了薄膜的表面形貌及晶粒结构,讨论了TiO2的氧敏感机理,测试薄膜的敏感特性及响应特性。实验结果表明:硅PN结基底TiO2氧传感器具有工作温度低、低功耗、体积小、线性化好的优点。A new oxygen sensor with PN junction of silicon as the substrate is fabricated. The operation principle, structure design, process and characteristics analysis of the sensor are described. Ag electrodes and TiO2 thin films are prepared by RF magnetron sputtering process. The microstructure and surface morphology are examined by X- ray diffractometer （XRD） and scanning electron microscopy （ SEM）, and the oxygen-sensitive mechanism of TiO2 thin films is discussed. Experiments results show that this kind of sensor has the characteristic of small volume, low power and good linear degreed.

关 键 词：氧传感器 射频磁控溅射 PN结 金红石相 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TP206[自动化与计算机技术—控制科学与工程]