taC∶N电极的制备及其电化学行为初步研究  

Study On The Preparetion and Electrochemical Beavior of Nitrogen Doped Tetrahedral Amorphous Carbon Electrode

作　　者：刘姝[1] 王广甫[2] 汪正浩[1] 

机构地区：[1]北京师范大学化学学院,北京100875 [2]北京师范大学测试中心,北京100875

出　　处：《电化学》2006年第3期338-340,共3页Journal of Electrochemistry

基　　金：国家自然科学基金项目(20173004)资助

摘　　要：taC∶N膜是一种具有潜力的半导体电极材料,但该电极制作中存在基底硅片与导线间的欧姆接触问题.根据高温处理对taC∶N膜性质的影响,本文先在硅片上制作欧姆接触,再沉积taC∶N膜,并由此得到了一批具有不同含氮量的taC∶N电极.循环伏安测试表明,膜中氮含量的增加只使阴极背景极限正移,而对阳极背景极限几乎没有影响,电化学窗口也因此而变窄.taC： N films are a good materials for semiconductor electrodes. But further studies are hampered by the ohmic contact problem, which occurs between the silicon and the lead. By studying the influence of heat treatment on the film＇s property, it is believed that ohmic contact should be made on the silicon first, and then the film be deposited. A set of taC： N electrodes with various nitrogen content have been prepared. CV study indicates that the cathodic limits move slowly to positive direction, while the anodic limits are unchanged with the increasing of nitrogen content. As a result, the electrochemical windows get narrow either.

关 键 词：taC:N电极 欧姆接触 循环伏安法 

分 类 号：O646.54[理学—物理化学]