提高Si量子点发光强度的途径  

Approach for Enhancing Luminescent Intensity of Si Quantum Dots

作　　者：康建波[1] 彭英才[1] 简红彬[1] 马蕾[1] 张雷[1] 

机构地区：[1]河北大学电子信息工程学院,河北保定071002

出　　处：《微纳电子技术》2006年第10期476-480,491,共6页Micronanoelectronic Technology

摘　　要：探讨了提高Si量子点发光强度的可能途径。这些方法主要包括:采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。The routes for enhancing luminescent intensity of Si quantum dots was discussed. These methods including the ordered Si quantum dots with high density and small size, the use of optical microcavity structure, surface passivation technologies, and doping of rare earth luminescent centers, which are very important for the fabrication of high luminescent intensity Si quantum dots.

关 键 词：Si量子点 发光强度 光致发光 电致发光 

分 类 号：O431.2[机械工程—光学工程]