SiGe HBT基区结构的优化对欧拉电压的影响  

Effect of Base Structure Optimization of SiGe HBTs on Early Voltage

作　　者：王玉东[1] 徐阳[1] 张伟[1] 李希有[1] 刘爱华[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2006年第5期601-603,共3页Microelectronics

摘　　要：欧拉电压是SiGe HBT一项重要的直流参数,受到基区结构(如Ge组分)的影响。研究发现,高温过程会导致硼的外扩散,从而影响异质结的位置,使欧拉电压受到影响。实验发现,通过优化基区结构,加厚CB结处i-SiGe厚度,可获得VA=520 V,βVA=164,320 V的SiGe HBT。As one of the important DC parameters of SiGe HBTs, Early voltage is affected by base structure, such as Ge content at the interface of collector-base junction. Effects of boron out-diffusion on Early voltage are investigated. When high temperature processes are involved in the fabrication of SiGe HBTs, boron atoms diffuse towards N-collector layer and emitter layer from SIMS analysis and the Ge content at the interface of collector-base junction decreases, so that the Early voltage decreases. By increasing the depth of i-SiGe at the collector and base interface, devices with VA = 520 V and flVA = 164,320 V are fabricated.

关 键 词：SIGE HBT 欧拉电压 硼外扩散 

分 类 号：TN322.8[电子电信—物理电子学]