TbCo薄膜磁各向异性的单离子模型分析  

The Single Ion Model Concerning the Magnetic Anisotropy of TbCo Thin Film

作　　者：章平[1] 黄致新[2] 张玉龙[1] 王辉[2] 张峰[2] 

机构地区：[1]郧阳师范高等专科学校物理系,湖北丹江口442700 [2]华中师范大学物理系,湖北武汉430073

出　　处：《许昌学院学报》2006年第5期37-40,共4页Journal of Xuchang University

摘　　要：根据沉积过程中薄膜中稀土原子周围最近邻原子的各向异性排列,建立了TbCo非晶垂直磁化膜磁各向异性的单离子模型,并计算了TbCo非晶垂直磁化膜磁各向异性能Ku值,与实验测量结果符合很好.结果表明:膜内非S态Tb离子的非球对称电荷分布与局部晶场之间的相互作用,是TbCo薄膜存在垂直磁各向异性的主要原因.The single ion model of the perpendicular magnetic anisotropy in ThCo amorphous film has been proposed, according to the anisotropic arrangement of the nearest neighbor atoms around rare atom in film sputtering deposition process, and the perpendicular magnetic anisotropy energy of these films is calculated. The calculation results are in good accordance with experimental results. The results shows that the interactions between the non - S state Th ion in non - spherical electric charge distribution and the deformed local crystalline field, accounts for the major source of perpendicular magnetic anisotropy of ThCo amorphous films.

关 键 词：TbCo薄膜 垂直磁各向异性 单离子模型 

分 类 号：O484.43[理学—固体物理]