常压化学气相沉积技术生长ZnO:H薄膜的光学性质  

Optical Properties of ZnO∶H Films Grown by Atmospheric Pressure Metal Organic Chemical Vapor Deposition(AP-MOCVD)

作　　者：李璠[1] 王立[1] 戴江南[1] 蒲勇[1] 方文卿[1] 江风益[1] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,南昌330047

出　　处：《光学学报》2006年第10期1585-1588,共4页Acta Optica Sinica

基　　金：国家863计划纳米专项课题(2003AA302160);电子信息产业发展基金资助课题

摘　　要：采用常压金属有机物化学气相沉积技术(AP-MOCVD),以二乙基锌(DEZn)为Zn源,去离子水(H2O)为氧源,N2作载气,在外延ZnO薄膜的反应气氛中通入少量氢气,在c-Al2O3衬底上生长出了ZnO∶H薄膜。用X射线双晶衍射和光致发光谱对ZnO∶H薄膜的结晶性能和光学性质进行表征。结果表明,ZnO∶H薄膜(002)和(102)面的Ω扫描半峰全宽分别为46.1 mrad和81.4 mrad,表明该薄膜具有良好的结晶性能;室温下,ZnO∶H薄膜具有较强的紫外光发射(380 nm),在低温10 K光致发光谱中观测到位于3.3630 eV处与氢相关的中性施主束缚激子峰(I4)及其位于3.331 eV处的双电子卫星峰(TES)。采用退火的方法,通过观测I4峰的强度变化,研究了氢在ZnO∶H薄膜中的热稳定性。发现随着退火温度的升高,I4峰的强度逐渐减弱,表明在高温下退火,氢会从ZnO薄膜中逸出。ZnO： H thin films were prepared on c-Al2O3 substrate by adding a little of H2 gas in the reaction gas when depositing ZnO films using atmospheric pressure metal organic chemical vapor deposition （AP-MOCVD） with carrier gas of nitrogen. Zn（C2H5 ）2 （DEZn） and H2O were used as Zn and O precursors, respectively. The crystallizing performance and optical properties were studied with double-crystal X-ray diffraction and photoluminescence. The full widths at half maximum of the （002） and （102） omega rocking curves of ZnO： H films were 46.1 mrad and 81.4 mrad, respectively, indicating the high crystal quality of the films. The room temperature photoluminescence （PL） spectra showed that there was a strong ultraviolet emission at 380 nm. Meanwhile, a strong hydrogen-related bound exciton peak （14） at 3. 363 eV and its two electron satellite at 3. 331 eV were observed in the low temperature PL spectra at 10 K. In addition, the thermal stability of hydrogen in ZnO： H films were investigated by observing the intensity change of 14 peak during the annealing process. The results showed that the intensity of 14 peak decreased with the annealing temperature increasing, indicating the hydrogen would evolve out from ZnO： H films annealed at high temperature.

关 键 词：薄膜光学 氧化锌 氢 常压金属有机物化学气相沉积 光致发光 

分 类 号：O47[理学—半导体物理]