对不同制备方法下的ZnO基薄膜晶体管透过率的研究  

Study on Transmission of ZnO-TFT by Different Deposition Way

作　　者：袁广才[1] 徐征[1] 张福俊[1] 王勇[1] 许洪华[2] 孙小斌[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044 [2]辽宁大学物理系,沈阳110036

出　　处：《光子技术》2006年第3期140-143,共4页Photon Technology

基　　金：国家自然科学基金(10374001)和(60576016);国家重点基础研究发展计划(2003CB314707);国家自然科学基金重点项目(10434030)

摘　　要：文章主要是研究采用磁控溅射和电子束热蒸发两种制备方法来制备ZnO-TFT器件,并通过XRD和透射光谱来对样品的性质进行分析比较,得出采用溅射法制备的ZnO-TFT器件有源层的ZnO薄膜从结晶化程度、表面粗糙度及透过率都较采用电子束蒸发制得的ZnO薄膜优异,其有较好的c-axis(002)方向择优取向,器件的平均透过率在85%以上。并研究了退后处理对器件性能的影响,并发现快速热退火有利于薄膜的晶化,降低缺陷态密度。A novel transparent ZnO based on thin-film transistor was fabricated by rf-reactive magnetron sputtering and electron beam evaporating respectively. By comparisons of the sample through XRD and transmittance spectra, it was concluded that crystallization, surface modality and optical transmission of active layer of ZnO-TFT device by magnetron sputtering were better than device fabricated by electron beam evaporating, c-axis （002） oriented of the ZnO film got the best and average optical transmittance of the device reached upwards 85%. Influence to the device by anneal was also studied, we found that anneal make for crystallization of ZnO film and reduced density of defect states.

关 键 词：ZnO—TFT 透过率 快速热退火 

分 类 号：TN304[电子电信—物理电子学] TQ050[化学工程]