GaAlAs半导体功率放大激光器耦合效率的研究  

Study on Coupling Efficiency of Laser with GaAlAs Semiconductor Power Amplification

作　　者：杨晓妍[1] 杨琏[1] 刘丹[1] 王征宇[1] 李松柏[1] 王安锋[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2006年第3期12-13,共2页Journal of Changchun University of Science and Technology(Natural Science Edition)

摘　　要：通过对波长808nm的GaAIAs／GaAs半导体功率放大激光器端面镀ZrO2减反射膜工艺过程,从理论和实验上分析了涂层特性,透射率由无膜时的69％和32．6％提高到镀膜后的90％和80％以上,提高器件的耦合效率、输出光功率和工作寿命。The properties of coatings are analyzed theoretically and experimentally throughout the deposition process of ZrO2 antireflection films on facets of GaAIAs/GaAs laser with semiconductor power amplification for the wavelength of 808 nm . The transmissivities of cavity faces are increased from 69 % and 32. 6% without coatings to above 90% and 80% with coatings. The coupling efficiency of device , output power of laser and operating lifetime are improved.

关 键 词：半导体 功率放大 耦合 减反射膜 

分 类 号：TN248.4[电子电信—物理电子学]