InAs/GaAs透镜形量子点超晶格材料的纵向和横向周期对应变场分布的影响  

Effect of the longitudinal and transverse stacking period of In As/GaAs quantum dots on the distribution of strain field

作　　者：刘玉敏[1] 俞重远[1] 杨红波[1] 黄永箴[2] 

机构地区：[1]北京邮电大学理学院 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《物理学报》2006年第10期5023-5029,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2003CB314901);国家高技术研究发展计划(批准号:2003AA311070);集成光电子学国家重点联合实验室开放课题资助的课题.~~

摘　　要：对量子点超晶格材料中量子点纵向周期和同层量子点的横向周期间距对量子点及其周围应变场分布的影响进行了系统的研究.结果表明,横向和纵向周期通过衬底材料之间的长程相互作用对量子点沿中心轴路径应变分布的影响效果正好相反,在适当条件下,两者对量子点应变场分布的影响可以部分抵消.同时也论证了在单层量子点和超晶格量子点材料中,计算量子点的电子结构时,应综合考虑量子点空间周期分布对载流子限制势的影响,不能简单的利用孤立量子点模型来代替.A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.

关 键 词：应变 半导体量子点 自组织 

分 类 号：O471.1[理学—半导体物理]