Cat-CVD法制备硅薄膜及在TFT中的应用进展  

Preparation of Si Film by Cat-CVD and Its Applications in TFT

作　　者：刘少林[1,2] 邹兆一[1] 庞春霖 付国柱[2] 邱法斌[1] 

机构地区：[1]吉林大学电子科学与工程学院 [2]中国科学院长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林长春130031 [3]清溢精密光电(深圳)有限公司

出　　处：《液晶与显示》2006年第5期483-490,共8页Chinese Journal of Liquid Crystals and Displays

基　　金：国家"863"计划资助项目(No.2002AA303250);吉林省科技发展计划项目(No.20010305)

摘　　要：目前有源平板显示领域主要采用PECVD法制备TFT用硅薄膜,但是由于PECVD中等离子对Si薄膜的损伤以及淀积薄膜的温度很高的缺点,使其在制备高迁移率TFT的应用中受到了限制。新出现的催化化学气相淀积法(Cat-CVD)与PECVD法相比,具有淀积速率高、原料气体利用效率高、衬底温度低、生长的薄膜致密、电学特性好等优点,将更有希望成为TFT用硅薄膜制备的新技术。文章对Cat-CVD法的工作机理及其在TFT中的应用进展进行了详细总结,归纳了各种催化丝材料,并对当前Cat-CVD技术研究中的不足及其以后的研究发展进行了讨论。Si films used for TFT are mostly prepared by PECVD method in AMFPD. But this method is not perfect because the plasma in PECVD will harm Si films and deteriorate its characteristic. A new tech- nology for preparing films has appeared,that＇s Cat-CVD. Comparing with PECVD, Cat-CVD （Catalytic Chemical Vapor Deposition） has many merits for the films deposited： higher rate of deposition; greater efficiency of row material gas; much lower temperature of substrate; larger density and excellent electronic characteristics, etc. It is a new technology that could been widely used in preparation of Si films for TFT of AMLCD and it can also be used to improve characteristics of films, such as passi- vation or etching of films. This paper summarized the mechanism of Cat-CVD and its applications in TFT, discussed its scarcity and the direction in further research work.

关 键 词：硅薄膜 薄膜晶体管 化学气相淀积法 

分 类 号：TN141[电子电信—物理电子学]