ZnO基薄膜晶体管的研究  

Study on ZnO-based Thin Film Transistors

作　　者：程松华[1] 曾祥斌[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《液晶与显示》2006年第5期515-520,共6页Chinese Journal of Liquid Crystals and Displays

摘　　要：ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。Zinc oxide is a wide band gap optoelectronic semiconductor material, it can be applied in many fields, such as varistors, surface acoustic waves, gas sensors, UV detectors and so on. Zinc oxide can also be used in thin film transistors as an active layer. ZnO TFT has many excellent characteristics. The average optical transmission in the visible part of the spectrum is more than 80 %. The field effect mobility is as large as 36 cm^2/V· s. Ioo/Ioff, ratio is more than 106. ZnO TFT can be manufactured at a low temperature （or even at room temperature）. Therefore, ZnO TFT has the potential to take the place of conventional a-Si TFT in active-matrix liquid crystal displays. Meanwhile, study on ZnO TFT has motivated considerable development on transparentelectronics. In this paper, electrical advantages, as well as some defects of ZnO TFT are described, and then an expectation of its future application is given.

关 键 词：ZNO TFT 迁移率 开/关电流比 有源矩阵液晶显示器 开口率 

分 类 号：TN141[电子电信—物理电子学] TN386.2