检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:卢正启[1] 李佐宜[1] 胡作启[1] 缪向水[1] 崔英 林更琪 胡用时[1]
机构地区:[1]华中理工大学固体电子学系
出 处:《上饶师专学报》1996年第6期29-33,共5页
摘 要:本文采用射频磁控溅射方法制备了DyFeCo非晶磁光薄膜,研究了氩气压,溅射功率对DyFeCo薄膜性能的影响,实验表明:反射率随氩气压升高而降低,矫顽力随氩气压升高而逐渐增大,达到一定值时克尔回线反向,随后矫顽力又逐渐减少,高气压下的矫顽力温度特性较低气压下的矫顽力温度特性要好,但氩气压进一步升高,磁光克尔回线矩形度变差,本征磁光克尔角随氩气压升高而增大,到达最大值后又逐渐减少。反射率随溅射功率增加而升高,到达最大值后又逐渐下降,矫顽力随溅射功率增加而逐渐增大,到达最大值后,磁光克尔回线反向,然后矫顽力又逐渐减小。为了满足高信噪比,记录信息稳定的磁光记录要求,氩气压选为3.5—5.5Torr、溅射功率选为300W—350W较佳。DyFeCo amorphous films were r. f. maagnetron sputtered onto glass substrate. The Influence of sputtereing argon pressure and power on the properties of DyFeCo amorphous film are discussed. The reflectivity and the Kerr hysteessis loop Squareness decrease with increasing the sputtering Pressure. At first,the coercive field increase with increesing the sputtiering pressure, then the Kerr hysteresis loops are raversed, since then, the corcive field decreases. The Kerr angle increases with increasing the spotlering pressure, When reachs the maximum, then decreases. The reflectivity and Kerr angle increase with increase the spotter power, when reaching the maximum,then decrease.The coercivefield at first increases with increasing the sputtering power,then the Kerr hysteresis loops are reversed,since then the coercive field deCreases. It is optimum to choose that sputttring argon is about 3 -- 5 mTorr, sputtering power is about 300 -- 350W in order to meet the requirement of megnetic-optical recording.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15