不同淀积温度多晶硅纳米薄膜的压阻特性  

Piezoresistive Properties of Poly-Si Nanofilms Deposited at Different Temperatures

作　　者：揣荣岩[1] 刘晓为[1] 潘慧艳[1] 王蔚[1] 张颍[1] 

机构地区：[1]哈尔滨工业大学MEMS中心

出　　处：《传感技术学报》2006年第05B期1810-1814,共5页Chinese Journal of Sensors and Actuators

摘　　要：重掺杂多晶硅纳米薄膜具有较大的应变系数和良好的温度特性,是制作力学量传感器的理想压阻材料.为优化多晶硅纳米薄膜的压阻特性,就淀积温度对低压化学气相淀积多晶硅纳米薄膜的压阻特性的影响进行了实验研究.在扫描电镜观测和X射线衍射实验基础上,利用隧道压阻模型分析了薄膜结构和压阻特性的关系.结果表明薄膜结构对应变系数的影响非常显著,但对应变系数的温度特性影响却很小.综合淀积温度对压阻特性和电导特性的影响,多晶硅纳米薄膜的最佳淀积温度在620℃左右.Heavy doped polycrystalline silicon （Poly-Si） nanoflims have great gauge factors （GF） and good temperature characteristics, and they are ideal piezoresistive materials for mechanics sensors. To optimize piezoresistive characteristics of poly-Si nanofilms, the influences of deposition temperatures were investigated on piezoresistive properties of low pressure chemical vapor deposited （LPCVD） nanofilms. On the base of scanning electron microscope （SEM） observations and X-ray diffraction （XRD） experiments, the relationship between the film structure and piezoresistive characteristics was analyzed using tunneling piezoresistive model. The results indicate that the film structure has marked influences on GF, but its influences on temperature characteristics of GF are little. Combining the influences of deposition temperature on piezoresistive properties and conductive characteristics, the best deposition temperature is about 620℃.

关 键 词：多晶硅 纳米薄膜 压阻特性 淀积温度 应变系数 

分 类 号：O738[理学—晶体学]