大宽厚比悬空薄膜的制备与性能分析研究  

Fabrication and Characterization of Free Standing Structure Membrane with High Width-Thickness Ratio

作　　者：李博[1] 徐晨[1] 赵慧[1] 赵林林[1] 霍文晓[1] 宋义超[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院

出　　处：《传感技术学报》2006年第05A期1391-1394,共4页Chinese Journal of Sensors and Actuators

基　　金：北京市人才强教计划项目资助(05002015200504)

摘　　要：研究了MEMS中的悬空薄膜制备技术.用浓硼扩散自终止腐蚀法和PECVD淀积法分别进行了试验,得到了宽厚比为3000∶1的悬空浓硼Si薄膜和宽厚比为9000∶1的SiNx薄膜.对它们的力学特性进行了分析,用纳米硬度计测量了薄膜的杨氏模量.比较了两种方法的优劣.The free standing structure film is a key part of MEMS device. We used PECVD equipment to deposit low stress SiNx film and fabricated boron-doped p^＋-silicon free-handing diaphragm using anisotropic wet etching techniques. The ratio of width to thickness of p^＋-silicon flee-handing diaphragm is about 3 000： 1. The corresponding figure of SiNx film is 9 000 ： 1. We measured its Young＇s modulus by nanoindentation, analyzed the dynamic performance of the film and compared the difference of these two methods.

关 键 词：大宽厚比 悬空薄膜 杨氏模量 纳米硬度计 

分 类 号：TN305[电子电信—物理电子学]