MEMS工艺中反应离子深刻蚀硅片的数值模型研究  

A Model of Deep-RIE in MEMS Fabrications

作　　者：张鉴[1] 黄庆安[1] 李伟华[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《传感技术学报》2006年第05A期1426-1429,1433,共5页Chinese Journal of Sensors and Actuators

基　　金：国家杰出青年科学基金资助课题(50325519)

摘　　要：反应离子深刻蚀(DRIE)是目前MEMS加工中便捷有效的主流加工工艺之一.开发较为快捷有效的工艺仿真模型与工具,对于工艺的数值预报,有着重要的作用.通过对现有表面演化算法的比较,建立了一种基于单一表面演化算法的反应离子深刻蚀模型,有效地解决了运算效率、材料区分等问题及对原表面演化算法稳定性的改善,并对深刻蚀中的淀积模型进行了改进.与实验结果较为一致的模拟结果验证了本文模型的有效性.Deep reactive ion etching （Deep-RIE） is one of the most convenient and popular processes in MEMS fabrications. Developing a fast and effective simulation model or tool is very important to numerical forecasts for MEMS manufactures. After comparing the characteristics of main surface evolvement algorithms, a Deep-RIE model is developed based on a single surface evolvement algorithm. So the executing efficiency is improved, the identification of different materials by simple data structure is achieved, and the stability of the surface model is ensured. Further more, the deposition model is also modified. The accordance between simulated and experimental results shows the validity of this developed model.

关 键 词：反应离子深刻蚀 表面演化算法 模型 仿真 

分 类 号：TN43[电子电信—微电子学与固体电子学]