AFM诱导氧化脉冲宽度与Si纳米加工  

Pulse Duration of AFM Induced Oxidation and Si Nano-Fabrication

作　　者：刘庆纲[1] 何博涛[1] 张超艳[1] 祁森[1] 张世林[2] 胡小唐[1] 

机构地区：[1]天津大学精密测试计量技术及仪器国家重点实验室,天津300072 [2]天津大学电子信息工程学院,天津300072

出　　处：《传感技术学报》2006年第05A期1441-1443,1447,共4页Chinese Journal of Sensors and Actuators

基　　金：天津市自然科学基金资助(06YFJZJC01000);教育部天津大学南开大学科技合作项目的资助

摘　　要：通过对利用原子力显微镜(AFM)阳极诱导氧化作用下在硅表面生成纳米氧化结构的特征的讨论,发现通过改变加工时的偏置电压和脉冲宽度,氧化点高度和宽度与所施加偏置电压呈对数关系,氧化点高度与宽度与脉冲宽度呈指数关系;同时发现在环境温度和氧气浓度保持不变的条件下通过改变加工中的相对大气湿度,氧化点结构的高度和宽度随相对湿度的增加而增加.文中对该现象进行了讨论,并对加工条件进行了优化.The characteristics of nanometer scale silicon oxide＇s structures, fabricated by conductive Atomic Force Microscope （AFM）＇s tip induced anodic oxidation, are discussed. The logarithmic relations between the height/width of the oxides and the bias voltages, and the exponential relations between the height/ width of the oxides and pulse durations are found by changing the voltage and pulse duration of nano-oxidation. At the same time, the effect of humidity on the height and width of nano-oxidation structures is stud- ied at various relative humidities by keeping the oxygen concentration and temperature the same. The resuits indicate that the height/width of the oxides increase with the increase of the ambient humidity. The phenomena mentioned above are discussed and the fabrication conditions are optimized.

关 键 词：AFM阳极氧化 脉冲宽度 偏置电压 大气湿度 

分 类 号：TN16[电子电信—物理电子学]