10Gb/s,0·2μm GaAs PHEMT跨阻放大器分析与设计  

Analysis and Design of 10Gb/s,0.2μm GaAs PHEMT Trans-Impedance Amplifiers

作　　者：蔡水成[1] 王志功[1] 高建军[1] 朱恩[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《Journal of Semiconductors》2006年第10期1808-1813,共6页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2001AA312060);江苏省高校省级重点实验室开放基金(批准号:JSICK0403)资助项目~~

摘　　要：对基于0·2μmGaAsPHEMT工艺设计的10Gb/s低噪声前置放大器进行了理论分析与仿真,并且进行了流片测量验证.电路采用共源结构,噪声小,灵敏度高.测量结果表明该前置放大器在3·3V单电源、50Ω输出负载的条件下,跨阻为57·8dB·Ω,带宽可达到11GHz,芯片面积为0·5mm×0·4mm.测试结果与理论分析和仿真结果比较符合,此前置放大器可以工作在10Gb/s速率.A 10Gb/s low noise preamplifier based on a 0.2μm GaAs PHEMT is theoretically analyzed,simulated, and taped out for verification. A common-source topology is adopted to reduce the noise and enhance the sensitivity. The test results show that under a single supply voltage of 3.3V,the preamplifier has a trans-impedance of 57. 8dB ·Ω with a bandwidth of over 10GHz. The chip＇s area is 0.5mm × 0.4mm. According to the test results the preamplifier can operate well at 10Gb/s.

关 键 词：PHEMT 跨阻 噪声 

分 类 号：TN722[电子电信—电路与系统]