共振隧穿二极管的压阻特性测试与研究  

Piezoresistive Properties of Resonant Tunneling Diodes

作　　者：毛海央[1] 熊继军[1] 张文栋[1] 薛晨阳[1] 桑胜波[1] 鲍爱达[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室电子测试技术国防重点实验室,太原030051

出　　处：《Journal of Semiconductors》2006年第10期1789-1793,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:50405025;50375050);霍英东基金(批准号:01052)资助项目~~

摘　　要：设计并搭建了检测共振隧穿二极管(RTD)压阻特性的实验系统,测试了RTD结构在不同应力状态下I-V特性曲线的漂移.实验结果表明RTD结构压阻特性的灵敏度大于1×10-8Pa-1.为了更精确地定量表达其压阻特性,研究了同一RTD结构I-V特性的一致性,得到相同环境条件下RTD电阻的最大相对漂移量小于3%,其中1%由测试仪器造成.This paper reports the piezoresistive properties of resonant tunneling diodes （RTDs） as detected with a newly established testing system. The shifts of their I-V characteristics in different stress states are detected, demonstrating that the RTDs possess piezoresistive properties. The sensitivity of the RTDs is larger than 1 × 10^-8 pa^-1. Moreover,to accurately illustrate the piezoresistive properties of RTD, the I-V characteristic coherence of an RTD is tested. According to the experimental results,the largest relative resistance shift of an RTD in the same environmental condition is less than 3%, 1% of which is caused by the testing instrument.

关 键 词：共振隧穿二极管 压阻特性 一致性 灵敏度 喇曼光谱 

分 类 号：TN311[电子电信—物理电子学]