厚硅片的高速激光切片研究  

Study on LD-pumped Nd:YAG laser cutter for silicon wafer

作　　者：崔建丰[1] 赵晶 樊仲维[1] 赵存华[1] 张晶[1] 牛岗[1] 石朝晖[1] 裴博[3] 张国新[3] 薛岩[3] 毕勇[4] 亓岩[4] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所 [2]有研半导体材料股份有限公司,北京100035 [3]北京国科世纪激光技术有限公司,北京100085 [4]中国科学院光电研究院,北京100085

出　　处：《光学精密工程》2006年第5期829-834,共6页Optics and Precision Engineering

基　　金：国家863计划重大项目(No.2004AA31G120);北京市科委重大项目(No.H020420070011)资助

摘　　要：基于激光切片原理的分析,给出了厚硅片的高速激光切片方法,采用平凸腔补偿工作物质的热透镜效应,利用Nd∶YAG棒本身的自孔径选模作用,获得了光束质量因子M2等于4.19的50 W 1.064μm激光输出。选取合适的扩束倍数、重复频率和出气孔直径,当切割0.75 mm厚的硅片时,切片速度达400 mm/min;当切割两层叠放的0.75 mm厚的硅片时,切片速度达到100 mm/min。切片的切口光滑,切缝较窄,重复精度高,切片质量好,达到用传统方法难以达到的切片效果。By analysizing the theory of laser cutter, a rapid laser cutter method is given for cutting thick silicon wafer. Considering laser medium thermal lens effect and thermal focal length changing with the pumping power, using piano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence, utilizing the Nd ＂ YAG self- aperture effect also, more than 50 W average power 1. 064μm laser output is obtained with beam quality factor M^2 of 4.19. Choosing suitable beam expander factor, appropriate aperture diameter of exit beam and repetition rate, when the cutting velocity is 400 mm/min, a silicon wafer of 0.75 mm thickness can be penetrated ; when the cutting velocity is 100 mm/min, a silicon wafer of double-layer 0.75 mm thickness can be penetrated.Experimental results show that the cross section is fine in narrow groove and excellent repeatability precision, it is more better than that of other conventional cutting methods.

关 键 词：激光技术 全固体激光器 声光调Q 激光切片 硅片 

分 类 号：TN249[电子电信—物理电子学]