氮分压对离子束溅射镍铬合金薄膜的影响  

Influence of Nitrogen Partial Pressure on NiCr Thin Films Prepared by Ion Beam Sputtering

作　　者：田莉[1] 周继承[1] 晏建武[1] 

机构地区：[1]中南大学物理科学与技术学院

出　　处：《武汉理工大学学报》2006年第10期21-23,41,共4页Journal of Wuhan University of Technology

基　　金：国家自然科学基金(60371046)

摘　　要：研究了氮气分压对薄膜沉积速率、表面形貌、电阻温度系数(TCR)以及电阻率的影响。利用原子力显微镜表征了薄膜的表面形貌,用Alpha-Step IQ台阶仪和四探针测量了薄膜的厚度和方块电阻。结果表明:薄膜沉积速率随氮气分压增大而减小;热处理使薄膜颗粒尺寸均匀,电阻率减小,电阻迟滞减小且TCR由负值变为正值。The nitrogen partial pressure dependence of deposition rate, surface morphology, TCR and resistivity is studied in this article, The films were characterized by AFM to study surface morphology. The film＇ s thickness and sheet resistance were measured by Alpha-Step IQ Profilers and four-point probe. The experimental results showed that for as-deposited film, deposition rate decreased with increasing partial pressure; heat-treatment made the average grain size and the total resistance reduction decreased. After annealing, the resistivity of films decreased and TCR turn into positive value.

关 键 词：NiCr薄膜 表面形貌 电阻率 TCR 

分 类 号：TB43[一般工业技术]