Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon  

作　　者：F. Ayad M. Remram 

机构地区：[1]Department of Electronics, University of Mentourl Route of Ain El-Bay Constantine, 25000 Algeria

出　　处：《Chinese Physics Letters》2006年第11期3058-3060,共3页中国物理快报（英文版）

摘　　要：Reducing the concentration of the metallic impurities present in silicon-based electronic components plays a vital role in manufactures. Gettering by induced mechanical damage is one of the methods used in neutralizing these impurities. To simulate this type of gettering, we explicitly include the role of the traps due to mechanical damage, based on the mechanism of kick-out. In our model, we choose the essential parameters including concentration of impurities, thickness, temperature, time, etc. The diffusion coefficient and equilibrium concentration of the silicon interstitials estimated from the literature have been adjusted to be in good agreement with the experimental data.Reducing the concentration of the metallic impurities present in silicon-based electronic components plays a vital role in manufactures. Gettering by induced mechanical damage is one of the methods used in neutralizing these impurities. To simulate this type of gettering, we explicitly include the role of the traps due to mechanical damage, based on the mechanism of kick-out. In our model, we choose the essential parameters including concentration of impurities, thickness, temperature, time, etc. The diffusion coefficient and equilibrium concentration of the silicon interstitials estimated from the literature have been adjusted to be in good agreement with the experimental data.

关 键 词：DIFFUSION GOLD 

分 类 号：O47[理学—半导体物理]