GaAs MMIC开关MESFET电路建模技术研究  

Circuit Modeling Technique for GaAs MMIC Switch MESFET

作　　者：戴永胜[1] 方大纲[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094

出　　处：《南京理工大学学报》2006年第5期612-617,共6页Journal of Nanjing University of Science and Technology

基　　金：国家自然科学基金(60171017)国防科技重点实验室基金

摘　　要：基于Agilent公司的IC-CAP软件及GaAs圆片工艺加工线,研究了砷化镓微波毫米波单片集成电路(GaAs M-MMIC)开关MESFET电路建模技术及其应用。讨论了MMIC设计中电路建模技术的重要性,提出了高精度GaAs MMIC开关MESFET简化电路模型及不同栅宽模型参数的比例缩放方案,扩展了电路模型的应用频率范围,解决了电路模型参教提取中的关键问题,如:开关MESFET模型的版图设计、微波探针校准图形的设计、电路模型参数的提取、统计和确认。采用该技术提取的电路模型参数,成功研制出GaAs MMIC控制电路系列产品,验证了该方法的有效性。Based on the Agilent IC-CAP and GaAs foundry process line, a circuit modeling technique for GaAs MMIC （monolithic microwave intergrated circuit） switch MESFET （metal semiconductor field effect transistor） and its application over microwave and millimeter frequency band are studied. The importance of the circuit modeling technique in MMIC design is discussed. The schemes of high precision predigest circuit model and the scaling technique of different gate-width devices are presented. The range of the available frequency bandwidth of the circuit model is expanded. The key problems of the circuit model parameter extraction are solved. The layout design of the modeling switch MESFET and the microwave probing calibration, the extraction, and the statistical analysis and the verification of the model parameters are introduced. By using the parameters of the established model, the successful design of a series of GaAs control MMIC products demonstrates the effectiveness of the proposed method.

关 键 词：砷化镓微波单片集成电路 开关场效应晶体管模型 电路模型参数 微波控制电路 多倍频程 

分 类 号：TN12[电子电信—物理电子学]