射频磁控反应溅射法制备Y_2O_3薄膜的工艺研究  

Preparation Process of Y_2O_3 Thin Film Using RF Magnetron Reactive Sputtering

作　　者：闫锋[1] 刘正堂[1] 谭婷婷[1] 李强[1] 

机构地区：[1]西北工业大学材料学院,西安710072

出　　处：《机械科学与技术》2006年第11期1362-1364,共3页Mechanical Science and Technology for Aerospace Engineering

基　　金：航空科学基金项目(04G53043)资助

摘　　要：采用射频磁控反应溅射法制备氧化钇(Y2O3)薄膜。系统研究了工艺参数对Y2O3薄膜沉积速率的影响规律,使用X射线光电子能谱仪(XPS)分析表征了薄膜的成分。结果表明,Y2O3薄膜的沉积速率随射频功率的增大而增大,在合适的溅射压强下沉积速率呈现极大值,O2/Ar气体流量比和衬底温度的影响不明显,对此从理论上进行了解释。制备的薄膜中Y和O元素的原子浓度基本符合Y2O3的化学计量比。Yttrium trioxide （Y2O3） thin film has been prepared by using radiation frequency （RF） magnetron reactive sputtering. The influence of process parameters on its deposition rate was studied systematically, and its composition was analyzed by using X-ray photo-electronic spectrographs（XPS）. The results show that its deposition rate increases with the increase of RF power and that its peak appears when the film is under appropriate sputtering pressure. The influences of O2/Ar gas flow ratio and the temperature of substrates are subtle, the theoretical explanation of which was also presented in the paper. The atomic concentration ratio of Y and O in the thin film prepared this way is basically consistent with its stoichiometric ratio.

关 键 词：射频磁控反应溅射 Y2O3薄膜 沉积速率 

分 类 号：TB32[一般工业技术—材料科学与工程]