GaAs MESFET脉冲微波功率器件瞬态热场模型  

Transient-state thermal model of GaAs MESFET microwave pulsed power amplifier

作　　者：熊小明 郭世岭 周卫 

机构地区：[1]航天二院23所专业部,北京100854

出　　处：《电子测量技术》2006年第5期51-54,共4页Electronic Measurement Technology

摘　　要：GaAsMESFET微波功率放大器工作在脉冲周期状态下,由于自热效应,在很短的时间内(100μs数量级),芯片沟道温度可能产生十几度甚至几十度的变化,这种剧烈的温度变化导致功放性能的变化也是不能忽略的。本文通过建立、求解热扩散方程及能量平衡方程,建立起沟道温度的一维瞬态热模型。The temperature of chip channel rise in the GaAs MESFET microwave power amplifier which acts as pulse working state is sharp as the reason of self-heating effect. So the effect for the performance of the microwave power amplifier cannot be ignored as the sharp variety of temperature. The 1-D transient-state thermal model of microwave power amplifier is built in this paper by building and resolving the thermal diffusion equation and energy balance equation

关 键 词：GAAS MESFET脉冲微波功率放大器 自热效应 瞬态热模型 

分 类 号：TN386[电子电信—物理电子学]