取向和非取向In2O3纳米线的场发射研究  

Field-emission properties of aligned and unaligned In_2O_3 nanowires

作　　者：胡利勤[1] 林志贤[1] 郭太良[1] 姚亮[1] 王晶晶[1] 杨春建[1] 张永爱[1] 郑可炉[1] 

机构地区：[1]福州大学电子科学与应用物理系,福建350002

出　　处：《物理学报》2006年第11期6136-6140,共5页Acta Physica Sinica

基　　金：国家863计划平板显示重大专项(批准号:2005AA303G10);福建省科技重大专项(批准号:2004HZ01-2);福建省自然科学基金重点项目(批准号:A0420001)资助的课题.~~

摘　　要：用自制的设备制备了取向和无取向氧化铟纳米线,并研究了In2O3纳米线的场发射性质,发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线,这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故.Aligned and unaligned In2O3 nanowires were prepared based on our homemade equipment and the field-emission properties of In2O3 nanowires（NWs） were investigated. It was found that aligned In2O3 NWs have better performance than unaligned ones. The aligned NWs have lower turn-on and threshold electric fields. This might be attributed to the weaker field-screening effect between the neighboring aligned NWs, and the existence of more exposed tips as emitters in the aligned NWs.

关 键 词：场发射 纳米线 取向 非取向 

分 类 号：O485[理学—固体物理]