退火温度对PLT铁电薄膜微结构和电畴的影响  

Effects of Annealing Temperature on the Surface and Ferroelectric Domain of PLT Films

作　　者：黄惠东[1] 王志红[1] 路胜博[1] 吴家刚[2] 朱基亮[2] 肖定全[2] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054 [2]四川大学材料科学系,成都610064

出　　处：《材料导报》2006年第11期119-121,共3页Materials Reports

基　　金：973计划资助项目(51310)

摘　　要：常温下采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)基片上淀积(Pb0.9La0.1)TiO3薄膜,分别在550℃、570℃、600℃、630℃退火1h。采用X射线衍射、原子力显微镜和压电响应力显微镜检测不同退火温度的薄膜,讨论退火温度对薄膜结构、表面形貌和电畴结构的影响。结果表明:随着退火温度的升高,薄膜中钙钛矿相的含量增多,表面粗糙度和颗粒尺寸不断增大,薄膜从无畴状态变为以90°畴为主的多畴,而在退火升降温过程中,由于应力的影响,面外畴更多为取向向下的负畴。（Pb, La） TiO3 films on Pt/SiO2/Si substrate are prepared by RF magnetron sputtering at room temperature, and are treated at 550℃, 570℃, 600℃, 630℃ for 1 hour. By using X-ray diffraction, atomic force microscopy and piezoresponse force microscopy,the films treated at different temperature are investigated. The effects of annealing temperature on the crystalline structure, morphology and local ferroelectric domain distribution are dicussed. While annealing the films at the temperature from 550℃ to 630℃, it is found that the root-mean square of surface roughness and the size of surface grain increase, ferroelectric domains in films are 90 degree, and the majority of out-of- plane polarization are negative domain.

关 键 词：PLT 铁电薄膜 晶化 XRD PFM 

分 类 号：TB383[一般工业技术—材料科学与工程]