Growth studies of m-GaN layers on LiAlO2 by MOCVD  

作　　者：邹军 刘成祥 周圣明 王军 周建华 黄涛华 韩平 谢自力 张荣 

机构地区：[1]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China [2]Graduate School of Chinese Academy of Sciences, Beijing 100039, China [3]Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

出　　处：《Chinese Physics B》2006年第11期2706-2709,共4页中国物理B（英文版）

摘　　要：This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.

关 键 词：LiAlO2 substrate m-plane GaN layer optical properties 

分 类 号：O472.3[理学—半导体物理]