蓝宝石单晶生长过程中应力分布的数值模拟  

The Simulation of the Stress Distribution in Sapphire Crystal Grouth Progres

作　　者：姚泰[1] 左洪波[1] 韩杰才[1] 张明福[1] 孟松鹤[1] 姚秀荣[2] 李常青[1] 汪贵根[1] 许承海[1] 

机构地区：[1]哈尔滨工业大学复合材料与结构研究所,黑龙江哈尔滨150001 [2]哈尔滨理工大学材料科学与工程学院,黑龙江哈尔滨150040

出　　处：《哈尔滨理工大学学报》2006年第5期100-104,共5页Journal of Harbin University of Science and Technology

摘　　要：晶体生长过程中所产生的残余热弹性应力是影响晶体质量的重要因素之一.用Ansys软件为平台,以改进的Kyropoulos法制备Φ230x200mm大尺寸蓝宝石单晶为例,对所生长单晶体的热应力分布进行了数值模拟.建立了不同外形(放肩角)条件下晶体生长过程中热弹性应力的分布模型.讨论了不同放肩角对晶体热应力的影响.结果表明,通过改变晶体的外形可以改善热应力的分布,从而在晶体中获得更多的低应力区域.模拟结果和试验结果吻合较好.The thermal stress is one of the key factors that would impact the final quality of the sapphire crystal. In this paper, a two -dimensional model was established in the rectangular co -ordinate using the software of Ansys to study the distribution of the thermal stress in the bulk sapphire crystal with dimension Φ230x200mm, grown by the improved Kyropoulos method. In the simulation, the relationship between the thermal stress and the shouldering angle was discussed. The simulation results indicate that the distribution of the thermal stress can be improved and more low stress region can be obtaiued by changing the shouldering angles of the crystal during the growth process. Simulation results are in good agreement with the experiment.

关 键 词：晶体生长 热弹性应力 数值模拟 Kyropoulos 

分 类 号：O242.1[理学—计算数学]