门极换向晶闸管(GCT)扩散阻挡层的研究  

The Research on Diffusion Barrier of Gate Commutated Thyristor

作　　者：吴春瑜[1] 卢雪梅[1] 白永生[2] 刘一婷[1] 张馨芳[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036 [2]辽宁大学教务处,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2006年第4期289-291,共3页Journal of Liaoning University：Natural Sciences Edition

基　　金：辽宁省科技厅自然科学基金(002021);辽宁省教育厅自然科学基金(20021076)

摘　　要：通过对多种阻挡层特性的分析,选定了熔点高、化学稳定性好、电阻率低的TiN薄膜作为门极换向晶闸管阳极的阻挡层.采用磁控溅射技术生长的TiN,经俄歇电子谱仪分析表明,TiN阻挡层系统能有效地阻挡硅和铝的相互扩散,可作为门极换向晶闸管阳极理想的阻挡层材料.Through the analysis of many diffusion barriers, TiN thin film was chosen as the diffusion barrier for the anode metallization of gate commutated thyristor for its high melting point and chemistry stability and low electrical resistivity. TiN thin film is deposited by magnetron sputtering technique. The TiN film barrier property against Cu diffusion was investigated through AES depth profiling, the obtained results show that TiN is a suitable diffusion barrier for anode metallizadon of gate commutated thyristor.

关 键 词：扩散阻挡层 门极换向晶闸管 金属化. 

分 类 号：TN312[电子电信—物理电子学]