硅中氢致缺陷和微缺陷氢沉淀的消除及其应用  

Removal of the Hydrogen Induced Defects Microdefects in FZ(H) Silicon and Application in Thyristors

作　　者：陈燕生[1] 刘桂荣[1] 李怀祥 

机构地区：[1]北京科技大学物理化学系

出　　处：《北京科技大学学报》1996年第1期50-54,共5页Journal of University of Science and Technology Beijing

摘　　要：氢气氛下区熔拉制的鼓棱无位错硅单晶，原生晶体经化学腐蚀，观察不到缺陷，包括微缺陷。但当块状热处理后，经腐蚀常常观察到尺度ｍｍ数量级的氢致缺陷（　型缺陷、麻坑）和微缺陷氢沉淀。为了消除这些缺陷，原生单晶需片状供应，片厚应小于１ｍｍ，或中照后的区熔（氢）硅单晶，片状，９４０℃、０．５ｈ退火，均能消除之。在电力电子器件的应用中。Monocrystalline dislocation-free silicon is grown by FZ in pure hydrogen atmosphere. Defects including microdefects can not be observed in as-grown monocrystalline dislocation-free silicon afteretching. But hydrogen induced defects and microdefects in FZ(H) Si will be always observed as FZ(H) Si rod after annealing. In order to remove the hydrogen induced defects and microdefects, the as-grown FZ(H) Si rod had to cut into the wafer which thickness is less than 1mm or NTD FZ(H) Si wafer is treatmented at the 940℃ /0.5h. The qualified ratio was greater than 80% in the application of msnufacturing thyristors.

关 键 词：硅 单晶 氢 沉淀 

分 类 号：O771[理学—晶体学]