45nm工艺及材料的最新动态  

45 nm Technology and its Equipment

作　　者：翁寿松[1] 

机构地区：[1]无锡市罗特电子有限公司,江苏无锡214001

出　　处：《电子工业专用设备》2006年第11期9-12,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了45nm芯片、工艺和设备的最新动态。英特尔、TI、IBM、特许、英飞凌和三星都推出了45nm功能芯片。45nm主要工艺包括光刻、应变硅、低k电介质、Cu互连、高k电介质和离子注入等。光刻工艺采用193nmArF/浸没式光刻机。45nm工艺中应变硅技术已步入第三代,它综合采用双应力衬垫、应力记忆和嵌入SiGe层。In this paper, recent development of the 45 nm chip, technology and equipment are introduced. The 45 nm functional chips are manufactured by Intel, TI, IBM, chartered, Infineon and Samsung. The 45 nm main technology includes lithography, strained silicon, low-k dielectric, Cu interconnection, high-k dielectric and ion implantation etc. The lithography adpot the 193 nm Aft/immersion lithography equipment. The strained silicon technology is treaded to the third-generation strained silicon in the 45 nm technology. The double stress liner （DSL）, the stress memory and the embedded SiGe are comprehensive adpoted.

关 键 词：45 nm芯片 45 nm工艺 45 nm设备 应变硅技术 

分 类 号：TN405[电子电信—微电子学与固体电子学]