同步辐射光刻的X射线反射谱表征  

Synchrotron radiation induced surface etching characterized by X-ray reflectivity

作　　者：杜晓松[1] Hak S Hibma T Rogojanu O C Struth B 

机构地区：[1]电子科技大学光电信息学院 [2]Material Science Centre,University of Groningen,Groningen 9747 AG,the Netherlands [3]European Synchrotron Radiation Facility,BP220,38043 Grenoble,France

出　　处：《电子显微学报》2006年第5期368-372,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家出国留学基金(批准号:21851030);荷兰高等教育国际合作组织(Nuffic)资助项目

摘　　要：采用X射线反射(XRR)谱对同步辐射导致的氧化物薄膜的刻蚀进行了在位测试,结果表明波长为0.154nm的单色X光在室温下可对MgO和Cr2O3产生轻微的刻蚀。与文献中大量报道的同步辐射X射线光刻及烧蚀不同,这是单色X射线光刻的首次报道。尽管刻蚀速率极慢,但利用XRR谱的高分辨率,成功地检测到了膜厚的减薄。The synchrotron radiation （SR） etching of oxides were in situ measured by X-ray reflectance （XRR） spectra. The results showed that the monochromatic X-ray with a wavelength of 0. 154nm could etch MgO and Cr2O3 thin films slightly. In contrast to the intense study of SR etching and ablation, this report was the first one concerning SR etching using a monochromatic light source. Although the etching rates were quite slow, the decreases of film thickness were successfully detected by XRR methods benefited by its high resolution for thickness determination.

关 键 词：同步辐射 光刻 X射线反射谱 

分 类 号：TN405.7[电子电信—微电子学与固体电子学]