铜铟硒薄膜太阳能电池的几个基础问题研究  

Fundamental studies of CuInSe_2 thin films based solar cells

作　　者：蒋方丹[1] 冯嘉猷[1] 

机构地区：[1]清华大学材料科学与工程系先进材料教育部重点实验室,北京100084

出　　处：《物理》2006年第11期957-960,共4页Physics

摘　　要：文章简述了铜铟硒(CIS)薄膜电池的性能特点和研究现状,重点提出了影响其规模化推广的几个基础问题,包括:射频溅射法直接制备CIS薄膜、省略硒化工艺的问题;ZnO替代CdS作为CIS薄膜电池的缓冲层材料的问题;Na+离子对CIS薄膜及电池性能的作用及机制问题.这几个基础问题的研究成果,可以为CIS薄膜电池产业化探索新的道路.The performance characteristics and research status of CuInSe2 film and solar cells are briefly introduced. The emphasis is laid on several fundamental issues of CIS film solar cells, which importantly affect their large - scale application, including preparation of CIS films directly by RF - sputtering to avoid the selenization process, the possibility of replacement of CdS by ZnO as buffer layers, and the effect and internal mechanism of Na^＋ ion on properties of CIS films and solar cells. Such research is looking forward to promote the industrialization of CIS film solar cells.

关 键 词：铜铟硒 薄膜电池 ZnO缓冲层 Na^+作用 

分 类 号：TM914.4[电气工程—电力电子与电力传动]