IGBT及其子器件的几种失效模式  

A few failure modes in IGBT and it subdevices

作　　者：刘鹿生[1] 

机构地区：[1]北京电力电子学会

出　　处：《电力电子》2006年第5期45-49,共5页Power Electronics

摘　　要：本文通过案例和实验,概述了四种IGBT及其子器件的失效模式:MOS栅击穿、IGBT-MOS阈值电压漂移、IGBT有限次连续短路脉冲冲击的积累损伤和静电保护用高压npn管的硅熔融。This paper based on instance and experiment, the four failure modes in IGBT and it subdevices： MOS gate breakdown; IGBT--MOS threshold voltage shift; Cumulative damage of IGBT under repetitive short-circuits operation and Silicon melting of HV npn transistor for ESD Protection are summarized.

关 键 词：栅击穿 阈值电压漂移 积累损伤 硅熔融 

分 类 号：TN322.8[电子电信—物理电子学]