AlGaN/InGaN/GaN双异质结构中2DEG的数值模拟  

Numerical Simulation on the 2DEG in the AlGaN/InGaN/GaN Double Heterostructures

作　　者：刘芳[1] 王涛[1] 姚建铨[1] 

机构地区：[1]国家重点实验室,天津大学激光与光电子研究所,天津大学精密仪器与光电子工程学院,天津300072

出　　处：《科学技术与工程》2006年第23期4682-4684,4694,共4页Science Technology and Engineering

摘　　要：由于InGaN的物理性质,在传统AlGaN/GaN单异质结中嵌入一定厚度的InGaN层,会使二维电子气的密度提高为原来的近两倍。正是从导带差、极化效应两个方面分析了这种现象的原因,并且通过自洽求解泊松方程和薛定谔方程分别作出了AlGaN/InGaN/GaN双异质结和AlGaN/GaN单异质结的能级图以及2DEG的电子能量图,进一步解释了该现象。Due to the physical property, the concentration of 2DEG which is in inserting InGaN in AlGaN/GaN SH-heterojunction is nearly twice then AIGaN/GaN. The reason from the offset of conduction band and polarization are nalysed, and the chart of the energy level was drawing by self-consistent solving Poisson equation and Schrodinger equation, the phenomenon is explained by The chart.

关 键 词：二维电子气 导带差 极化 自洽求解 

分 类 号：TN304.2[电子电信—物理电子学]