射频磁控溅射制备掺Al的纳米Si-SiO_2复合薄膜及其光致发光特性  

The preparation and photoluminescence of Al-deped nc-Si-SiO_2 composite films by r.f.magnetron sputtering

作　　者：郭亨群[1] 杨琳琳[1] 王启明[2] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021 [2]中国科学院半导体研究所,北京100083

出　　处：《功能材料》2006年第11期1706-1708,共3页Journal of Functional Materials

基　　金：国家自然科学基金重点资助项目(60336010)

摘　　要：采用射频磁控技术和退火处理制备掺Al的纳米Si-SiO_2复合薄膜。通过X射线衍射(XRD)、X射线光电子能谱(XPS)和傅里叶变换红外光谱(FT- IR)表征了薄膜的结构,组分和成键情况。掺Al在SiO_2中造成氧空位,使薄膜光致发光强度增强,并出现新的发光峰。退火温度对掺Al薄膜的光致发光的峰位和峰强有较大影响。Al-doped nc-Si-SiO2 composite films were prepared by r. f. magnetron sputtering and annealing. The structure, composition and bond formation of the films were characterized by X-ray diffraction（XRD）, X-ray photoelectron spectroscopy（XPS） and Fourier transform infrared spectroscopy（FTIR）. Al-doping produced oxygen vacancies in SiO2, thus increased PL intensity and formed new PL peaks. Annealing temperature affects the peak position and the intensity of PL.

关 键 词：Al—Si—SiO2薄膜 磁控溅射 光致发光 

分 类 号：O484[理学—固体物理]