新型槽栅MOSFETs的特性  

Characteristics of Groove-Gate MOSFETs

作　　者：曹艳荣[1] 马晓华[1] 郝跃[1] 于磊[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2006年第11期1994-1999,共6页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60376024);国家高技术研究发展计划(批准号:2003AA1Z1630)资助项目~~

摘　　要：采用SIVALCO软件对槽栅与平面器件进行了仿真对比分析,结果表明槽栅器件能够有效地抑制短沟道及热载流子效应,而拐角效应是槽栅器件优于平面器件特性更加稳定的原因.对自对准工艺下成功投片所得沟道长度为140nm的槽栅器件进行测量,结果有力地证明了槽栅器件较平面器件的优越性.The grooveand planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO, and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects. From the analysis of the field,we find that due to the corner effect,the performance of groove-gate MOSFETs is better than that of the planar. The groove-gate MOSFETs with 140nm channel length fabricated with a self-aligned process are tested,and the results effectively show the superiority of the groove-gate MOSFETs over the planar.

关 键 词：自对准 槽栅器件 短沟道效应 热载流子效应 拐角效应 

分 类 号：TN386.1[电子电信—物理电子学]