数值分析渐变DBR对垂直腔面发射激光器谐振腔模的影响  

Numerical Analysis of the Effect of a DBR with Graded Interfaces on the Resonant Cavity of a VCSEL

作　　者：王小东[1] 吴旭明[1] 王青[1] 曹玉莲[1] 何国荣[1] 谭满清[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2006年第11期2011-2014,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2001AA312180)~~

摘　　要：通过数值分析研究了含线性渐变层的Al0.9Ga0.1As/AlyGa1-yAs/GaAs/AlxGa1-xAs DBR的光学特性及其对VCSEL谐振腔光学特性的影响,建立了渐变型DBR渐变层厚度与折射率的关系,通过特征矩阵法计算了突变GaAs/Al0.9Ga0.1As DBR和渐变型DBR的反射谱和反射相移,分析了渐变层对DBR反射率和反射相移的影响.对渐变型DBR,要使VCSEL谐振腔满足中心波长相位匹配条件,还需要在DBR靠近谐振腔一侧的最前面增加一定厚度的渐变层,称为相位匹配层.通过计算,我们得到了使VCSEL谐振腔满足相位匹配条件时均匀层和相位匹配层的厚度.The optical characteristics and the effect on a VCSEL resonant cavity of an Al0.9Ga0.1 As/AlyGa1-y As/GaAs/ Alx Ga1-x As DBR with linearly graded interfaces are analyzed numerically. The relations are established between the refractive index and the thickness of the graded interfaces. The reflectance spectrum and the reflective phase shift are calculated for an abrupt GaAs/AI0.9 Ga0.1As DBR and a graded interface DBR using the characteristic matrix method. The influence of the graded layer on the reflectivity and reflective phase shift of the DBR is analyzed. The result shows that an extra graded layer as a phase matching layer must be added in front of the graded interface DBR near the VCSEL resonant cavity to obtain the condition of phase matching at the central wavelength. The accurate thickness of the phase matching layer and homogeneous layer are obtained by numerical analysis on the condition of phase matching.

关 键 词：垂直腔面发射激光器 DBR 反射谱 反射相移 特征矩阵法 

分 类 号：TN248[电子电信—物理电子学]